Part Number:BQ76952
你好,
请问BQ76952 在报电芯欠压时,需要手动上下电单板,目前测试使用模拟器2.2v可以正常充电,1.9v充电失败,此时DDSG_FET和CHG_FET置1。
请问什么原因会导致这种现象?
Star Xu:
您好,请确认您的欠压保护值和SUV的保护值。
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Chu Allen:
您好,
欠压保护为2.5V, SUV指定什么?有点不明白。
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Star Xu:
您好,此参数设置欠压安全永久失效阈值。当最小电芯电压小于等于 Permanent Fail:SUV:Threshold Permanent Fail:SUV:Delay 秒,则触发 SUV 永久失效。
充电无法恢复正常。参数设置请参考TRM 13.7.2 Permanent Fail:SUV
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Chu Allen:
您好,设置SUV阈值为1.6V,低于2.2V仍不能充电,有没有其它保护点需要调整?
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Star Xu:
您好,请确认充放电MOS是打开还是关闭的, Settings:FET:Chg Pump Control[CPEN] 和 Settings:FET:FET Options[FET_CTRL_EN
详细请参考TRM 34页
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Chu Allen:
HI Star,
如上BQ76952原理图,还请帮忙确认下,谢谢!
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Star Xu:
您好,正在查看电路,稍后回复。
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Star Xu:
您好,请参考下面内容
Please ensure that there is a cell connected across VC16 and VC15. If VC16 is shorted to VC15, then the cell balancing switch in the top cell (between VC15 and VC14) could not be enabled, since that switch is an NFET and needs a higher voltage for its operation (it draws from BAT). VC16 uses a PFET for its cell balancing switch, so it doesn’t need the higher voltage, but it is the only cell which uses a PFET cell balancing switch, all the rest use NFETs.
Additionally, please make sure the VC1 capacitor is connected to GND instead of VC0. I noticed that the cell connect portion of the schematic has 12S cells, but the BQ76952 portion of the schematic has only 6S cells connected. is there a reason for this?
In order to diagnose the issue, I would like to see log files of the issue, as well as the gg.csv file.