TI中文支持网1.RAM仿真器仿真模式
[Linking…] "D:\CCStudio_v3.3PLA\C2000\cgtools\bin\cl2000" -@"Debug.lkf"
<Linking>
"D:\\CCStudio_v3.3PLA\\MyProjects\\Bidirectional DC-DC\\AD Sample Test3_Calibration – IN\\cmd\\2809_RAM_lnk.cmd", line 119: error: run placement fails for object ".ebss", size 0x104a (page 1). Available
ranges:
DRAMH0 size: 0x1000 unused: 0xeb6 max hole: 0xeb6warning: entry-point symbol other than "_c_int00" specified: "code_start"
error: errors encountered during linking; "./Debug/AD Sample Test.out" not
built
>> Compilation failure
DRAMH0 : origin = 0x3FB000, length = 0x001000
2.脱机模式
[Linking…] "D:\CCStudio_v3.3PLA\C2000\cgtools\bin\cl2000" -@"Debug.lkf"
<Linking>
"D:\\CCStudio_v3.3PLA\\MyProjects\\Bidirectional DC-DC\\AD Sample Test3_Calibration – IN\\cmd\\F2809.cmd", line 132: error: run placement fails for object ".ebss", size 0x104a (page 1). Available
ranges:
RAML1 size: 0x1000 unused: 0x1000 max hole: 0x1000warning: entry-point symbol other than "_c_int00" specified: "code_start"
error: errors encountered during linking; "./Debug/AD Sample Test.out" not
built
>> Compilation failure
RAML1 : origin = 0x009000, length = 0x001000 /* on-chip RAM block L1 */
发现2809在仿真或脱机运行时，上电的时候总会跑飞，总有按一下复位键才能正常运行.烦恼中…
