TI中文支持网1. PEAK CURRENT DRIVE TIMES是怎么样来设置，设置时间长短有什么利弊？
TDRIVEP = 00; TDRIVEN = 00 220ns
TDRIVEP = 01; TDRIVEN = 01 440
TDRIVEP = 10; TDRIVEN = 10 880
TDRIVEP = 11; TDRIVEN = 11 1660
2.HIGH SIDE (GHA, GHB, GHC) PEAK CURRENT GATE DRIVE 能说明下面不同驱动电流值对应分别能驱动大约多大电流MOSFET？怎么样对不同电流等级的MOSFET来设定下面的值？
High-side peak source current
IDRIVEP_HS = 0000 0.01A
IDRIVEP_HS = 0001 0.02
IDRIVEP_HS = 0010 0.03
IDRIVEP_HS = 0011 0.04
IDRIVEP_HS = 0100 0.05
IDRIVEP_HS = 0101 0.06
IDRIVEP_HS = 0110 0.07
IDRIVEP_HS = 0111 0.125
IDRIVEP_HS = 1000 0.25
IDRIVEP_HS = 1001 0.5
IDRIVEP_HS = 1010 0.75
IDRIVEP_HS = 1011 1
IDRIVEP_HS = 1100, 1101, 1110, 1111 0.05
IDRIVEN_HS High-side peak sink current
IDRIVEN_HS = 0000 0.02A
IDRIVEN_HS = 0001 0.03
IDRIVEN_HS = 0010 0.04
IDRIVEN_HS = 0011 0.05
IDRIVEN_HS = 0100 0.06
IDRIVEN_HS = 0101 0.07
IDRIVEN_HS = 0110 0.08
IDRIVEN_HS = 0111 0.25
IDRIVEN_HS = 1000 0.5
IDRIVEN_HS = 1001 0.75
IDRIVEN_HS = 1010 1
IDRIVEN_HS = 1011 1.25
IDRIVEN_HS = 1100, 1101, 1110, 1111 0.06
LOW SIDE (GLA, GLB, GLC) PEAK CURRENT GATE DRIVE
IDRIVEP_LS
Low-side peak source
current
IDRIVEP_HS = 0000 0.01
A
IDRIVEP_HS = 0001 0.02
IDRIVEP_HS = 0010 0.03
IDRIVEP_HS = 0011 0.04
IDRIVEP_HS = 0100 0.05
IDRIVEP_HS = 0101 0.06
IDRIVEP_HS = 0110 0.07
IDRIVEP_HS = 0111 0.125
IDRIVEP_HS = 1000 0.25
IDRIVEP_HS = 1001 0.5
IDRIVEP_HS = 1010 0.75
IDRIVEP_HS = 1011 1
IDRIVEP_HS = 1100, 1101, 1110, 1111 0.05
LOW SIDE (GLA, GLB, GLC) PEAK CURRENT GATE DRIVE
IDRIVEN_LS Low-side peak sink current
IDRIVEN_HS = 0000 0.02
A
IDRIVEN_HS = 0001 0.03
IDRIVEN_HS = 0010 0.04
IDRIVEN_HS = 0011 0.05
IDRIVEN_HS = 0100 0.06
IDRIVEN_HS = 0101 0.07
IDRIVEN_HS = 0110 0.08
IDRIVEN_HS = 0111 0.25
IDRIVEN_HS = 1000 0.5
IDRIVEN_HS = 1001 0.75
IDRIVEN_HS = 1010 1
IDRIVEN_HS = 1011 1.25
IDRIVEN_HS = 1100, 1101, 1110, 1111 0.06
3.Dead time in addition to 死区时间是怎么样来设置？
DEAD_TIME = 000 35ns
DEAD_TIME = 001 52
DEAD_TIME = 010 88
DEAD_TIME = 011 440
DEAD_TIME = 100 880
DEAD_TIME = 101 1760
DEAD_TIME = 110 3520
DEAD_TIME = 111 5280
4.FET CURRENT PROTECTION (VDS SENSING)怎么样设置下面几个参数值？
Drain-source voltage protection limit VDS_LEVEL = 00000 0.06V
VDS_LEVEL = 00001 0.068
VDS_LEVEL = 00010 0.076
VDS_LEVEL = 00011 0.086
VDS_LEVEL = 00100 0.097
VDS_LEVEL = 00101 0.109
VDS_LEVEL = 00110 0.123
VDS_LEVEL = 00111 0.138
VDS_LEVEL = 01000 0.155
VDS_LEVEL = 01001 0.175
VDS_LEVEL = 01010 0.197
VDS_LEVEL = 01011 0.222
VDS_LEVEL = 01100 0.25
VDS_LEVEL = 01101 0.282
VDS_LEVEL = 01110 0.317
VDS_LEVEL = 01111 0.358
VDS_LEVEL = 10000 0.403
VDS_LEVEL = 10001 0.454
VDS_LEVEL = 10010 0.511
VDS_LEVEL = 10011 0.576
VDS_LEVEL = 10100 0.648
VDS_LEVEL = 10101 0.73
VDS_LEVEL = 10110 0.822
VDS_LEVEL = 10111 0.926
VDS_LEVEL = 11000 1.043
VDS_LEVEL = 11001 1.175
VDS_LEVEL = 11010 1.324
VDS_LEVEL = 11011 1.491
VDS_LEVEL = 11100 1.679
VDS_LEVEL = 11101 1.892
VDS_LEVEL = 11110 2.131
VDS_LEVEL = 11111 2.131
VDS sense deglitch time
TVDS = 00 0μs
TVDS = 01 1.75
TVDS = 10 3.5
TVDS = 11 7
VDS sense blanking time
TBLANK = 00 0μs
TBLANK = 01 1.75
TBLANK = 10 3.5
TBLANK = 11 7
Alvin Zheng：
这个电流决定了pre-driver会在多短的时间内冲破米勒平台，完全打开MOS。快速打开MOS有助于支持更高的开关频率，并减小开关损耗，但也需要考虑EMC问题。这个参数的设定需要配合选择的MOS管的Q gate total来进行测试和调整。
