TI中文支持网TMDSEVMC6678LE开发版，采用论坛提供的NANDFLAH例子，发现对flash操作的三个例子中，flash_memfill_test和flash_bit_walking_test能通过测试，但是flash_addrtest例子却总是输出错误，感觉读操作出现了错误，无法读数据，请问是怎么回事呢？谢谢
Andy Yin1：
您好，我这边在EVM6678LE上运行下面链接中的EMIF工程，测试FLASH_MEM_AddrTest是可以通过的，log如下，麻烦确认一下使用的工程及测试log，谢谢。
http://www.deyisupport.com/question_answer/dsp_arm/c6000_multicore/f/53/t/47664.aspx
[C66xx_0] Initialize DSP main clock = 100.00MHz/1×10 = 1000MHzInitializing NAND flash…Manufacturer ID = 20h, Device ID = 36hthis is not an ONFI compliant deviceNAND FLASH size = 512 x 32 x 4096 = 67108864 BytesErasing blocks 4080 through 4095Passed Memory Fill Test from 0x 3fc0000 to 0x 4000000 with pattern 0x 0Erasing blocks 4080 through 4095Passed Memory Fill Test from 0x 3fc0000 to 0x 4000000 with pattern 0xaaaaaaaaErasing blocks 4080 through 4095Passed Memory Fill Test from 0x 3fc0000 to 0x 4000000 with pattern 0x55555555Erasing blocks 4080 through 4095Passed Memory Address Test from 0x 3fc0000 to 0x 4000000FLASH test complete.
