在HVMotorCtrl+PfcKit_v2.0的HVACI_Sensorless_2833x中死区时间的设置有程序
pwm1.Deadband = 2.0*SYSTEM_FREQUENCY; // 120 counts -> 2.0 usec for TBCLK = SYSCLK/1
/* Init Dead-Band Generator for EPWM1-EPWM3*/ \
(*ePWM[ch1]).DBFED = v.Deadband; \
(*ePWM[ch1]).DBRED = v.Deadband; \
(*ePWM[ch2]).DBFED = v.Deadband; \
(*ePWM[ch2]).DBRED = v.Deadband; \
(*ePWM[ch3]).DBFED = v.Deadband; \
(*ePWM[ch3]).DBRED = v.Deadband;
请问算出来的结果pwm1.Deadband即DBFED、DBRED不是应该是300吗?这样的话根据文档TMS320x2833x, 2823x Enhanced Pulse Width Modulator (ePWM) Reference Guide sprug04a里的Dead-Band Delay Values in μS as a Function of DBFED and DBRED不是应该是3μS吗?为什么注释是120 counts 2μS?
还有如果DBFED、DBRED设置的最大值就是1000,不能超过1000?
另外根据程序死区的寄存器设置,极性选择为AHC模式,并且Dead-band is fully enabled for both rising-edge delay on output EPWMxA and falling-edge delay on output EPWMxB,DBRED是上升沿延迟,DBFED是下降沿延迟,但是在图中AHC模式中下降沿延迟并没有看到啊,在这个模式中EPWMxB上升沿延迟了,请问这是怎么回事?
Johnson Chen1:
楼主你好,
pwm1.Deadband = 2.0*SYSTEM_FREQUENCY; // 120 counts -> 2.0 usec for TBCLK = SYSCLK/1
注释应该是笔误,因为程序从F2803X移植过来,对于F2803X来说120对应为2.0us.
如果是F2833X的话,同样原理设置2*150=300.
关于DBRED和DBFED,因为是高有效互补输出,因此BDRED作用在EPWMA的上升沿,而DBFED作用在EPWMB的上升沿,这个是正确的。DBRED和DBFED是针对原始波形来看就分别是上升缘和下降沿
在HVMotorCtrl+PfcKit_v2.0的HVACI_Sensorless_2833x中死区时间的设置有程序
pwm1.Deadband = 2.0*SYSTEM_FREQUENCY; // 120 counts -> 2.0 usec for TBCLK = SYSCLK/1
/* Init Dead-Band Generator for EPWM1-EPWM3*/ \
(*ePWM[ch1]).DBFED = v.Deadband; \
(*ePWM[ch1]).DBRED = v.Deadband; \
(*ePWM[ch2]).DBFED = v.Deadband; \
(*ePWM[ch2]).DBRED = v.Deadband; \
(*ePWM[ch3]).DBFED = v.Deadband; \
(*ePWM[ch3]).DBRED = v.Deadband;
请问算出来的结果pwm1.Deadband即DBFED、DBRED不是应该是300吗?这样的话根据文档TMS320x2833x, 2823x Enhanced Pulse Width Modulator (ePWM) Reference Guide sprug04a里的Dead-Band Delay Values in μS as a Function of DBFED and DBRED不是应该是3μS吗?为什么注释是120 counts 2μS?
还有如果DBFED、DBRED设置的最大值就是1000,不能超过1000?
另外根据程序死区的寄存器设置,极性选择为AHC模式,并且Dead-band is fully enabled for both rising-edge delay on output EPWMxA and falling-edge delay on output EPWMxB,DBRED是上升沿延迟,DBFED是下降沿延迟,但是在图中AHC模式中下降沿延迟并没有看到啊,在这个模式中EPWMxB上升沿延迟了,请问这是怎么回事?
chong wang:
回复 Johnson Chen1:
Johnson Chen1,您好,按照您说的F2833X设置是2*150=300的话,根据文档上Dead-Band Delay Values in μS as a Function of DBFED and DBRED的对应关系,在跑在150MHZ、DBFED, DBRED是300的情况下,延迟时间应该是3us,但是为什么我用示波器看到的是2us???
在HVMotorCtrl+PfcKit_v2.0的HVACI_Sensorless_2833x中死区时间的设置有程序
pwm1.Deadband = 2.0*SYSTEM_FREQUENCY; // 120 counts -> 2.0 usec for TBCLK = SYSCLK/1
/* Init Dead-Band Generator for EPWM1-EPWM3*/ \
(*ePWM[ch1]).DBFED = v.Deadband; \
(*ePWM[ch1]).DBRED = v.Deadband; \
(*ePWM[ch2]).DBFED = v.Deadband; \
(*ePWM[ch2]).DBRED = v.Deadband; \
(*ePWM[ch3]).DBFED = v.Deadband; \
(*ePWM[ch3]).DBRED = v.Deadband;
请问算出来的结果pwm1.Deadband即DBFED、DBRED不是应该是300吗?这样的话根据文档TMS320x2833x, 2823x Enhanced Pulse Width Modulator (ePWM) Reference Guide sprug04a里的Dead-Band Delay Values in μS as a Function of DBFED and DBRED不是应该是3μS吗?为什么注释是120 counts 2μS?
还有如果DBFED、DBRED设置的最大值就是1000,不能超过1000?
另外根据程序死区的寄存器设置,极性选择为AHC模式,并且Dead-band is fully enabled for both rising-edge delay on output EPWMxA and falling-edge delay on output EPWMxB,DBRED是上升沿延迟,DBFED是下降沿延迟,但是在图中AHC模式中下降沿延迟并没有看到啊,在这个模式中EPWMxB上升沿延迟了,请问这是怎么回事?
user5194603:
回复 Johnson Chen1:
不大懂啊,300怎么会对应2us呢?