mcu掉电存储实现

您好，正在用ti的MSP-EXP430FR2311。需要实现程序中某些参数的掉电存储。在driverlib users guide和产品users guide 都没找到相关的内容。不知道是否有对flash进行读写操作的例程或者操作说明。在drivelib example也没找到相关例程。

Ling Zhu2：

Outman J

您好，正在用ti的MSP-EXP430FR2311。需要实现程序中某些参数的掉电存储。在driverlib users guide和产��users guide 都没找到相关的内容。不知道是否有对flash进行读写操作的例程或者操作说明。在drivelib example也没找到相关例程。

灰小子：

这个msp430内部是fram，不是flash。如果你的参数不多的话，直接存储在信息存储区就可以，我记得mspware里有相关例程

Ling Zhu2：

回复 灰小子:

dirtwillfly

这个msp430内部是fram，不是flash。如果你的参数不多的话，直接存储在信�存储区就可以，我记得mspware里有相关例程

Outman J：

回复 灰小子:

可以直接把变量定义到fram区这样的吗，这样掉电，变量的值也不会丢失。

灰小子：

回复 Outman J:

例程里是FR2433，用的0x1800存储地址。

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//******************************************************************************
//MSP430FR243x Demo - Long word writes to FRAM
//
//Description: Use long word write to write to 512 byte blocks of FRAM.
//Toggle LED after every 100 writes.
//NOTE: Running this example for extended periods will impact the FRAM
//endurance.
//ACLK = REFO, MCLK = SMCLK = default DCODIV = ~1MHz
//
//It is recommended to disable interrupt while code is writing to main FRAM,
//because it is dangerous for running the interrupt services routine with//PFWP disabled.
//This code examples is using DFWP which wouldn't have dangerous. But it is//recommended to disable interrupt if user is using PFWP.
//
//MSP430FR2433
//---------------
///|\||
//| ||
//--|RST|
//||
//|P1.0 |---> LED
//
//Ling Zhu
//Texas Instruments Inc.
//Feb 2015
//Built with IAR Embedded Workbench v6.20 & Code Composer Studio v6.0.1
//******************************************************************************
#include <msp430.h>void FRAMWrite(void);unsigned char count = 0;
unsigned long *FRAM_write_ptr;
unsigned long data;#define FRAM_TEST_START 0x1800int main(void)
{WDTCTL = WDTPW | WDTHOLD;// Stop watchdog timerP1OUT &= ~BIT0;// Clear P1.0 output latch for a defined power-on stateP1DIR |= BIT0;// Set P1.0 to output directionOUTPM5CTL0 &= ~LOCKLPM5;// Disable the GPIO power-on default high-impedance mode// to activate previously configured port settingsdata = 0x11111111;// Initialize dummy datawhile(1){data += 0x00010001;FRAM_write_ptr = (unsigned long *)FRAM_TEST_START;FRAMWrite();count++;if (count > 100){P1OUT ^= 0x01;// Toggle LED to show 512 bytescount = 0;// have been writtendata = 0x11111111;}}
}void FRAMWrite (void)
{unsigned int i=0;SYSCFG0 = FRWPPW | PFWP;for (i = 0; i < 128; i++){*FRAM_write_ptr++ = data;}SYSCFG0 = FRWPPW | PFWP | DFWP;
}

Outman J：

回复 灰小子:

这样mcu上电后，就可以通过这个地址读取到我之前存的数据了对的吧 ？（*FRAM_TEST_START ）

Outman J：

回复 灰小子:

谢谢回复，在库中找到了 相应的例程。那该怎么去读取fram中已知地址的值呢。（关机前将数据存进了0x1800，上电后该怎么去获取这个值呢？）

Ling Zhu2：

回复 Outman J:

写

FRAMWrite_Char((uint8_t *)0x1800, 0xAA);

读

uint8 temp;temp = *((uint8_t *)0x1800);

 写函数 每个芯片可能有所差异，以下为范例

void FRAMWrite_Char(uint8_t *FRAM_write_ptr, uint8_t data)
{SYSCFG0 = FRWPPW | PFWP;*FRAM_write_ptr = data;SYSCFG0 = FRWPPW | PFWP | DFWP;
}

Outman J：

回复 Ling Zhu2:

您好 用这样的方式我并没有正确读到保存下来的数据。贴上代码如图

保存值为 0x01 获取值为0xff

Ling Zhu2：

回复 Outman J:

你用的哪颗芯片？