各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
囧:
你的DAC的reference现在设置的不是1.5V,你是怎么判断现在有问题的?
以下是一个根据controlsuite例程改的使用内部DAC 设置为1.65V 比较点,然后通过触发比较器可以触发EPWM4 oneshot事件,并且在EPWM4周期中断清标志的例子,你可以参考下。
#include "DSP28x_Project.h" // Device Headerfile and Examples Include File
// Prototype statements for functions found within this file.void InitEPwm4Example(void);void InitComp2(void);__interrupt void epwm4_tzint_isr(void);
// Global variables used in this exampleuint32_t EPwm4TZIntCount;uint32_t EPwm2TZIntCount;
void main(void){
// WARNING: Always ensure you call memcpy before running any functions from RAM// InitSysCtrl includes a call to a RAM based function and without a call to// memcpy first, the processor will go "into the weeds" #ifdef _FLASH memcpy(&RamfuncsRunStart, &RamfuncsLoadStart, (size_t)&RamfuncsLoadSize); #endif
// Step 1. Initialize System Control:// PLL, WatchDog, enable Peripheral Clocks// This example function is found in the f2802x_SysCtrl.c file. InitSysCtrl();
// Step 2. Initalize GPIO:// This example function is found in the f2802x_Gpio.c file and// illustrates how to set the GPIO to it's default state.// InitGpio(); // Skipped for this example
// For this case just init GPIO pins for ePWM1, ePWM2, and TZ pins InitEPwm4Gpio(); InitComp2(); EALLOW;
GpioCtrlRegs.GPBMUX1.bit.GPIO33 = 0; // Configure GPIO6 as EPWM4A GpioCtrlRegs.GPBDIR.bit.GPIO33 = 1; GpioDataRegs.GPBCLEAR.bit.GPIO33 = 1;
EDIS;// Step 3. Clear all interrupts and initialize PIE vector table:// Disable CPU interrupts DINT;
// Initialize the PIE control registers to their default state.// The default state is all PIE interrupts disabled and flags// are cleared.// This function is found in the f2802x_PieCtrl.c file. InitPieCtrl();
// Disable CPU interrupts and clear all CPU interrupt flags: IER = 0x0000; IFR = 0x0000;
// Initialize the PIE vector table with pointers to the shell Interrupt// Service Routines (ISR).// This will populate the entire table, even if the interrupt// is not used in this example. This is useful for debug purposes.// The shell ISR routines are found in f2802x_DefaultIsr.c.// This function is found in f2802x_PieVect.c. InitPieVectTable();
// Interrupts that are used in this example are re-mapped to// ISR functions found within this file. EALLOW; // This is needed to write to EALLOW protected registers PieVectTable.EPWM4_TZINT = &epwm4_tzint_isr; EDIS; // This is needed to disable write to EALLOW protected registers
// Step 4. Initialize all the Device Peripherals:// This function is found in f2802x_InitPeripherals.c// InitPeripherals(); // Not required for this example
//——————————————————————////////////////////////////////////////////////////////////////////////////////////////////// EDIS;//—————————————————————— EALLOW; SysCtrlRegs.PCLKCR0.bit.TBCLKSYNC = 0; EDIS;
InitEPwm4Example();
EALLOW; SysCtrlRegs.PCLKCR0.bit.TBCLKSYNC = 1; EDIS;
// Step 5. User specific code, enable interrupts// Initalize counters: EPwm4TZIntCount = 0;
// Enable CPU INT3 which is connected to EPWM1-3 INT: IER |= M_INT2;
// Enable EPWM INTn in the PIE: Group 2 interrupt 1-3 PieCtrlRegs.PIEIER2.bit.INTx4 = 1;
// Enable global Interrupts and higher priority real-time debug events: EINT; // Enable Global interrupt INTM ERTM; // Enable Global realtime interrupt DBGM
// Step 6. IDLE loop. Just sit and loop forever (optional): for(;;) { __asm(" NOP"); }
}
__interrupt void epwm4_tzint_isr(void){ EPwm4TZIntCount++;
// Leave these flags set so we only take this// interrupt once//EALLOW;// EPwm4Regs.TZCLR.bit.OST = 1;// EPwm4Regs.TZCLR.bit.INT = 1; EPwm4Regs.TZCLR.bit.DCAEVT1 = 1; EPwm4Regs.TZCLR.bit.INT = 1; EPwm4Regs.TZCLR.bit.OST = 1; GpioDataRegs.GPBDAT.bit.GPIO33 = EPwm4Regs.TZFLG.bit.OST;
EDIS;
// Acknowledge this interrupt to receive more interrupts from group 2 PieCtrlRegs.PIEACK.all = PIEACK_GROUP2;
}
void InitEPwm4Example(){
EALLOW; EPwm4Regs.TBPRD = 6000; // Set timer period EPwm4Regs.TBPHS.half.TBPHS = 0x0000; // Phase is 0 EPwm4Regs.TBCTR = 0x0000;
// Setup TBCLK EPwm4Regs.TBCTL.bit.CTRMODE = TB_COUNT_UPDOWN; // Count up/down EPwm4Regs.TBCTL.bit.PHSEN = TB_DISABLE; // Disable phase loading EPwm4Regs.TBCTL.bit.HSPCLKDIV = TB_DIV4; // Clock ratio to SYSCLKOUT EPwm4Regs.TBCTL.bit.CLKDIV = TB_DIV4;
EPwm4Regs.CMPCTL.bit.SHDWAMODE = CC_SHADOW; // Load registers every ZERO EPwm4Regs.CMPCTL.bit.SHDWBMODE = CC_SHADOW; EPwm4Regs.CMPCTL.bit.LOADAMODE = CC_CTR_ZERO; EPwm4Regs.CMPCTL.bit.LOADBMODE = CC_CTR_ZERO;
// Setup compare EPwm4Regs.CMPA.half.CMPA = 3000;
// Set actions EPwm4Regs.AQCTLA.bit.CAU = AQ_SET; // Set PWM1A on Zero// EPwm4Regs.AQCTLA.bit.CAU = AQ_CLEAR; // Set PWM1A on Zero EPwm4Regs.AQCTLA.bit.CAD = AQ_CLEAR;
EPwm4Regs.AQCTLB.bit.CAU = AQ_CLEAR; // Set PWM1A on Zero EPwm4Regs.AQCTLB.bit.CAD = AQ_SET; // Define an event (DCAEVT1) based on TZ1 and TZ2 EPwm4Regs.DCTRIPSEL.bit.DCAHCOMPSEL = DC_COMP2OUT; // DCAH = Comparator 2 output// EPwm4Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_COMP2OUT; // DCAL = TZ2 EPwm4Regs.TZDCSEL.bit.DCAEVT1 = TZ_DCAH_HI; // DCAEVT1 = DCAH high(will become active as Comparator output goes low) EPwm4Regs.DCACTL.bit.EVT1SRCSEL = DC_EVT1; // DCAEVT1 = DCAEVT1 (not filtered) EPwm4Regs.DCACTL.bit.EVT1FRCSYNCSEL = DC_EVT_ASYNC; // Take async path // Define an event (DCBEVT1) based on TZ1 and TZ2 // EPwm4Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP2OUT; // DCBH = Comparator 2 output // EPwm4Regs.DCTRIPSEL.bit.DCBLCOMPSEL = DC_TZ2; // DCAL = TZ2 // EPwm4Regs.TZDCSEL.bit.DCBEVT1 = TZ_DCBH_LOW; // DCBEVT1 = (will become active as Comparator output goes low) // EPwm4Regs.DCBCTL.bit.EVT1SRCSEL = DC_EVT1; // DCBEVT1 = DCBEVT1 (not filtered) // EPwm4Regs.DCBCTL.bit.EVT1FRCSYNCSEL = DC_EVT_ASYNC; // Take async path // Enable DCAEVT1 and DCBEVT1 are one shot trip sources // Note: DCxEVT1 events can be defined as one-shot. // DCxEVT2 events can be defined as cycle-by-cycle. EPwm4Regs.TZSEL.bit.DCAEVT1 = 1; // EPwm4Regs.TZSEL.bit.DCBEVT1 = 1;
// What do we want the DCAEVT1 and DCBEVT1 events to do? // DCAEVTx events can force EPWMxA // DCBEVTx events can force EPWMxB EPwm4Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM4A will go high// EPwm4Regs.TZCTL.bit.TZA = TZ_NO_CHANGE; // EPWM4A will go high EPwm4Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM4B will go low
// Enable TZ interrupt// EPwm4Regs.TZEINT.bit.OST = 1; // EPwm2Regs.TZSEL.bit.DCAEVT1 = 1; EPwm4Regs.TZEINT.bit.DCAEVT1 = 1; EDIS; }
void InitComp2(void){ EALLOW; /* Configure AIO4 for CMP2A (analog input) operation*/
GpioCtrlRegs.AIOMUX1.bit.AIO4 = 2; GpioCtrlRegs.GPAPUD.bit.GPIO3 = 1; // Disable pull-up for GPIO3 (CMP2OUT) /* Configure Comp pins using GPIO regs*/ // This specifies which of the possible GPIO pins will be Comp functional pins. // Comment out other unwanted lines. GpioCtrlRegs.GPAMUX1.bit.GPIO3 = 3; // Configure GPIO3 for CMP2OUT operation /* Comparator shares the internal BG reference of the ADC, * must be powered even if ADC is unused.*/ AdcRegs.ADCCTL1.bit.ADCBGPWD = 1;
Comp2Regs.COMPCTL.bit.SYNCSEL = 1; /* asynchronous output */ Comp2Regs.COMPCTL.bit.QUALSEL = 0x000F;
/* Power up Comparator 2 locally */ Comp2Regs.COMPCTL.bit.COMPDACEN = 1; /* Connect the inverting input to the internal DAC */ Comp2Regs.COMPCTL.bit.COMPSOURCE = 0; /* Set CMP2 protection threshold */ Comp2Regs.DACVAL.bit.DACVAL = 0x200; //0x200=512
EDIS;
}
各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
yiqun zheng:
回复 囧:
谢谢你的回复,我现在设置的是10/1023*3.3,设置成数字量10后,比较器输出还是低电平,那样说明我输入的值比10还小,当我反一下,当DCBEVT1低电平有效时,后我的TZFLAG.DCABVT1标志位会置位的,而我实际输入模拟信号时1.5V,从ADC结果寄存器中是可以读取数据的1600多,所以我判断是我的模拟比较器输入出现了状况。
您下面的代码和我配置应该是一样的,除了你下面的GPIO3和配置成CMP2OUT是什么意思?前面你输入的模拟信号时AIO4 对吧?
还有请问下,DCBH和DCAH在寄存器DCTRIPSEL中选择是怎么选择的,还有AH和AL也是随意选择的吗?
各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
囧:
回复 yiqun zheng:
如果是高触发,一般选择AH,如果是低触发,一般选择AL。你可以先看一下,COMPSTS寄存器,比较器是否真的被触发翻转了,如果触发了,说明外部输入电压和DAC没问题。COMP2OUT只是用来把比较器的结果输出到GPIO观测。
各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
yiqun zheng:
回复 囧:
您好:
COMPSTS寄存器确实没有触发,寄存器显示为0,很奇怪,从AD结果寄存器看应该是有电压进去了,实际这个比较器确实没有触发,我的配置我对了好些遍也没发现有错误地方~~AH和BH有区别吗?两个都可以用吧?
各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
yiqun zheng:
回复 囧:
您好:
我还和你一样把compout1的GPIO20口引出来,电平一直是低电平~~
各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
囧:
回复 yiqun zheng:
你现在是往哪个口输入电压,用的是哪个比较器?
各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
yiqun zheng:
回复 囧:
您好:
我是用ADCINB2/COMP1B/AIO10引脚作为模拟比较器输入,比较器用的comp1
各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
yiqun zheng:
回复 囧:
您好:
您说的应该是对的,我把ADCIN2B/COMP1B/AIO10当做了COMP1比较器1的输入1A是有问题的,COMP1比较器1的1A应该只能用ADCIN2ACOMP1A/AIO2去复用。
应该使这个问题,我这边代码把引脚ADCIN2B/COMP1B/AIO10复用成AIO2是有问题的,理解不到位。
各位大侠们:
请问下:我在使用tms32f28033中的comp外设时, 输入的模拟信号一直在比较器时输入口感觉一直是0(用内部DAC基准不同值实验),实际我加了1.5V,我从AD口采样读取数据1600多,照理说应该电压时输入了~~有哪些地方会影响输入模拟口比较器电压?代码如下:
// Inilialize Comp:
////////////////////////////COMP1A FOR DC OCP//////////////////////////
EALLOW;
//GpioCtrlRegs.AIOMUX1.bit.AIO2 = 2; // Configure AIO2 for CMP1A (analog input) operation
GpioCtrlRegs.AIOMUX1.bit.AIO10 =2; // Configure AIO10 for CMP1B (analog input) operation
AdcRegs.COMPHYSTCTL.bit.COMP1_HYST_DISABLE = 1; //Hysteresisdisable
Comp1Regs.COMPCTL.bit.CMPINV=0; //0: Output of comparator,1: Inverted
Comp1Regs.COMPCTL.bit.COMPSOURCE=0; //connected to internal DAC
Comp1Regs.COMPCTL.bit.SYNCSEL = 0; //Asynchronous version of Comparator output
//COMP1Regs.COMPCTL.bit.QUALSEL = 0xF; // filter, no need
Comp1Regs.COMPCTL.bit.COMPDACEN=1; //for test
//0-1023:0-3.3V, OCP:35A:35*0.010=0.35V,0.35*1023/3.3=109
// COMP1Regs.DACVAL.all= 200; //G3 50A
//0-1023:0-3.3V, OCP:35A:35*0.0075=0.2625V,0.2625*1023/3.3=81
Comp1Regs.DACVAL.all= 10;
// Define an event (DCAEVT1) based on TZ1 and TZ2
//选择COMP1_OUT作为输入:
EPwm1Regs.DCTRIPSEL.bit.DCBHCOMPSEL = DC_COMP1OUT; // DCAH = Comparator 1 output
// EPwm1Regs.DCTRIPSEL.bit.DCALCOMPSEL = DC_TZ2; // DCAL = TZ2
//DCAH高电平有效:
EPwm1Regs.TZDCSEL.bit.DCBEVT1 = 0x02; // DCBEVT1 = DCAH high(will become active as Comparator output goes low)
EPwm1Regs.DCBCTL.bit.EVT1SRCSEL = 0x0; // DCAEVT1 = DCAEVT1 (not filtered)
EPwm1Regs.DCBCTL.bit.EVT1FRCSYNCSEL = 0x1; // Take async path
// Enable DCAEVT1 and DCBEVT1 are one shot trip sources
// Note: DCxEVT1 events can be defined as one-shot.
// DCxEVT2 events can be defined as cycle-by-cycle.
EPwm1Regs.TZSEL.bit.DCBEVT1 = 1; //EnableDCAEVT1asone-shot-tripsourcefor this ePWMmodule
// DCAEVTx events can force EPWMxA
// DCBEVTx events can force EPWMxB
EPwm1Regs.TZCTL.bit.TZA = TZ_FORCE_LO; // EPWM1A will go high
EPwm1Regs.TZCTL.bit.TZB = TZ_FORCE_LO; // EPWM1A will go high
// Enable TZ interrupt
EPwm1Regs.TZCLR.all = 0x0007; //clear all TZFLAG
//Enable Interrupt generation;
// a one-shot trip event will cause a EPWMx_TZINT PIE interrupt
EPwm1Regs.TZEINT.bit.OST = 0; //OST中断
EDIS;
yiqun zheng:
回复 囧:
您好:
您说的应该是对的,我把ADCIN2B/COMP1B/AIO10的引脚复用成了AIO10作为了COMP1比较器的1A输入,这样的想法是错误的,正确的应该把ADCIN2A/COMP1A/AIO2引脚复用成COMP1A作为COMP1比较器的1A输入。